IRFW630A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFW630A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO263
IRFW630A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFW630A Datasheet (PDF)
irfw630a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.333 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact
irfw630b irfi630b.pdf
IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc
irfw630b.pdf
November 2013IRFW630BN-Channel MOSFET200 V, 9 A, 400 mFeaturesDescriptionThese N-Channel enhancement mode power field effect 9.0 A, 200 V, RDS(on) = 400 m (Max.) @ VGS = 10 V, transistors are produced using Fairchilds proprietary, ID = 4.5 A planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state Low Gate Charge (Typ.
Datasheet: IRFW520A , IRFW530A , IRFW540A , IRFW550A , IRFW610A , IRFW614A , IRFW620A , IRFW624A , K3569 , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , IRFW820A .
