IRFW630A - аналоги, даташиты, параметры транзистора

IRFW630A Datasheet (PDF)

..1. Size:215K 1
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..2. Size:509K samsung
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Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.333 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

7.1. Size:712K fairchild semi
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IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc

7.2. Size:697K fairchild semi
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November 2013IRFW630BN-Channel MOSFET200 V, 9 A, 400 mFeaturesDescriptionThese N-Channel enhancement mode power field effect 9.0 A, 200 V, RDS(on) = 400 m (Max.) @ VGS = 10 V, transistors are produced using Fairchilds proprietary, ID = 4.5 A planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state Low Gate Charge (Typ.