FQD20N06TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD20N06TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 16.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm

Encapsulados: D-PAK

 Búsqueda de reemplazo de FQD20N06TF MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQD20N06TF datasheet

 ..1. Size:745K  fairchild semi
 fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf pdf_icon

FQD20N06TF

January 2009 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especi

 6.1. Size:664K  fairchild semi
 fqd20n06l fqu20n06l.pdf pdf_icon

FQD20N06TF

May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es

 6.2. Size:855K  fairchild semi
 fqd20n06l.pdf pdf_icon

FQD20N06TF

Mar 2009 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es

 6.3. Size:1300K  onsemi
 fqd20n06.pdf pdf_icon

FQD20N06TF

November 2013 FQD20N06 N-Channel QFET MOSFET 60 V, 16.8 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is 16.8 A, 60 V, RDS(on) = 63 m (Max.) @ VGS = 10V, produced using Fairchild Semiconductor s proprietary ID = 8.4 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ.11.5 nC) MOSFET technology has been especially ta

MOSTRAR MÁS

Otros transistores... FQD1N60CTM, FQD1N60TF, FQD1N60TM, FQD1N80TF, FQD1N80TM, FQD1P50TF, FQD1P50TM, FQD20N06L, IRFB4227, FQD20N06TM, FQD24N08TF, FQD24N08TM, FQD2N100TF, FQD2N100TM, FQD2N30TM, FQD2N40TF, FQD2N40TM