Справочник MOSFET. FQD20N06TF

 

FQD20N06TF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD20N06TF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 38 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 16.8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 11.5 nC
   Время нарастания (tr): 45 ns
   Выходная емкость (Cd): 170 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.063 Ohm
   Тип корпуса: D-PAK

 Аналог (замена) для FQD20N06TF

 

 

FQD20N06TF Datasheet (PDF)

 ..1. Size:745K  fairchild semi
 fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf

FQD20N06TF FQD20N06TF

January 2009QFETFQD20N06 / FQU20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especi

 6.1. Size:664K  fairchild semi
 fqd20n06l fqu20n06l.pdf

FQD20N06TF FQD20N06TF

May 2001TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es

 6.2. Size:855K  fairchild semi
 fqd20n06l.pdf

FQD20N06TF FQD20N06TF

Mar 2009TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es

 6.3. Size:1300K  onsemi
 fqd20n06.pdf

FQD20N06TF FQD20N06TF

November 2013FQD20N06N-Channel QFET MOSFET60 V, 16.8 A, 63 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 16.8 A, 60 V, RDS(on) = 63 m (Max.) @ VGS = 10V,produced using Fairchild Semiconductors proprietary ID = 8.4 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ.11.5 nC)MOSFET technology has been especially ta

 6.4. Size:800K  cn vbsemi
 fqd20n06.pdf

FQD20N06TF FQD20N06TF

FQD20N06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note

 6.5. Size:772K  cn vbsemi
 fqd20n06le.pdf

FQD20N06TF FQD20N06TF

FQD20N06LEwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top