FQD20N06TF Datasheet and Replacement
Type Designator: FQD20N06TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 16.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
Package: D-PAK
FQD20N06TF substitution
FQD20N06TF Datasheet (PDF)
fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf

January 2009QFETFQD20N06 / FQU20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especi
fqd20n06l fqu20n06l.pdf

May 2001TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es
fqd20n06l.pdf

Mar 2009TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es
fqd20n06.pdf

November 2013FQD20N06N-Channel QFET MOSFET60 V, 16.8 A, 63 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 16.8 A, 60 V, RDS(on) = 63 m (Max.) @ VGS = 10V,produced using Fairchild Semiconductors proprietary ID = 8.4 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ.11.5 nC)MOSFET technology has been especially ta
Datasheet: FQD1N60CTM , FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM , FQD1P50TF , FQD1P50TM , FQD20N06L , AON6414A , FQD20N06TM , FQD24N08TF , FQD24N08TM , FQD2N100TF , FQD2N100TM , FQD2N30TM , FQD2N40TF , FQD2N40TM .
History: GSM3019S | APT5018BFLLG | BSZ100N03LSG
Keywords - FQD20N06TF MOSFET datasheet
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History: GSM3019S | APT5018BFLLG | BSZ100N03LSG



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