FQD4P40TM Todos los transistores

 ..1. Size:759K  fairchild semi
 fqd4p40tf fqd4p40tm.pdf

January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especia

 7.1. Size:780K  fairchild semi
 fqd4p40.pdf

November 2013 FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Description Features These P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V, ID = -1.35 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC) technology has been especially t

 7.2. Size:816K  onsemi
 fqd4p40.pdf

FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V, ID = -1.35 A Description Low Gate Charge (Typ. 18 nC) These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF) transistors are produced using ON Semiconductor s 100% Avalanche Tested proprietary, planar stripe, DMOS technology.

 9.1. Size:591K  fairchild semi
 fqd4p25.pdf

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

 9.2. Size:980K  fairchild semi
 fqd4p25tm ws.pdf

November 2013 FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC) technology has been especi

 9.3. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

 9.4. Size:2975K  onsemi
 fqd4p25tm-ws.pdf

FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, Description ID = -1.55 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor s Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET t