Справочник MOSFET. FQD4P40TM

 

FQD4P40TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD4P40TM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.1 Ohm
   Тип корпуса: D-PAK

 Аналог (замена) для FQD4P40TM

 

 

FQD4P40TM Datasheet (PDF)

 ..1. Size:759K  fairchild semi
 fqd4p40tf fqd4p40tm.pdf

FQD4P40TM FQD4P40TM

January 2009QFETFQD4P40 / FQU4P40 400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

 7.1. Size:780K  fairchild semi
 fqd4p40.pdf

FQD4P40TM FQD4P40TM

November 2013FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Description FeaturesThese P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC)technology has been especially t

 7.2. Size:816K  onsemi
 fqd4p40.pdf

FQD4P40TM FQD4P40TM

FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 ADescription Low Gate Charge (Typ. 18 nC)These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF)transistors are produced using ON Semiconductors 100% Avalanche Testedproprietary, planar stripe, DMOS technology.

 9.1. Size:591K  fairchild semi
 fqd4p25.pdf

FQD4P40TM FQD4P40TM

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

 9.2. Size:980K  fairchild semi
 fqd4p25tm ws.pdf

FQD4P40TM FQD4P40TM

November 2013FQD4P25TM_WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = -1.55 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC)technology has been especi

 9.3. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf

FQD4P40TM FQD4P40TM

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

 9.4. Size:2975K  onsemi
 fqd4p25tm-ws.pdf

FQD4P40TM FQD4P40TM

FQD4P25TM-WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,DescriptionID = -1.55 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC)produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF)proprietary planar stripe and DMOS technology. This advanced MOSFET t

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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