All MOSFET. FQD4P40TM Datasheet

 

FQD4P40TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD4P40TM

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 55 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 3.1 Ohm

Package: D-PAK

FQD4P40TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD4P40TM Datasheet (PDF)

1.1. fqd4p40tf fqd4p40tm.pdf Size:759K _fairchild_semi

FQD4P40TM
FQD4P40TM

January 2009 QFET® FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especia

3.1. fqd4p40.pdf Size:780K _fairchild_semi

FQD4P40TM
FQD4P40TM

November 2013 FQD4P40 P-Channel QFET® MOSFET -400 V, -2.7 A, 3.1 Ω Description Features • These P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, ID = -1.35 A transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 18 nC) technology has been especially t

 5.1. fqd4p25 fqu4p25.pdf Size:585K _fairchild_semi

FQD4P40TM
FQD4P40TM

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is espe

5.2. fqd4p25.pdf Size:591K _fairchild_semi

FQD4P40TM
FQD4P40TM

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 10.3 pF) This advanced techn

 5.3. fqd4p25tm ws.pdf Size:980K _fairchild_semi

FQD4P40TM
FQD4P40TM

November 2013 FQD4P25TM_WS P-Channel QFET® MOSFET -250 V, -3.1 A, 2.1 Ω Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 10 nC) technology has been especi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top