All MOSFET. FQD4P40TM Datasheet

 

FQD4P40TM Datasheet and Replacement


   Type Designator: FQD4P40TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: D-PAK
 

 FQD4P40TM substitution

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FQD4P40TM Datasheet (PDF)

 ..1. Size:759K  fairchild semi
 fqd4p40tf fqd4p40tm.pdf pdf_icon

FQD4P40TM

January 2009QFETFQD4P40 / FQU4P40 400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

 7.1. Size:780K  fairchild semi
 fqd4p40.pdf pdf_icon

FQD4P40TM

November 2013FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Description FeaturesThese P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC)technology has been especially t

 7.2. Size:816K  onsemi
 fqd4p40.pdf pdf_icon

FQD4P40TM

FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 ADescription Low Gate Charge (Typ. 18 nC)These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF)transistors are produced using ON Semiconductors 100% Avalanche Testedproprietary, planar stripe, DMOS technology.

 9.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P40TM

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

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Datasheet: FQD4N25TF , FQD4N25TM , FQD4N50TF , FQD4N50TM , FQD4P25TF , FQD4P25TM , FQD4P40 , FQD4P40TF , STF13NM60N , FQD5N15TF , FQD5N15TM , FQD5N20LTF , FQD5N20LTM , FQD5N20TF , FQD5N30TF , FQD5N30TM , FQD5N40TF .

Keywords - FQD4P40TM MOSFET datasheet

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