IRF2204SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF2204SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 170 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 1570 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO-263

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IRF2204SPBF datasheet

 ..1. Size:323K  international rectifier
irf2204lpbf irf2204spbf.pdf pdf_icon

IRF2204SPBF

PD - 95491A IRF2204SPbF Typical Applications IRF2204LPbF Industrial Motor Drive HEXFET Power MOSFET D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6m G 175 C Operating Temperature Fast Switching ID = 170A Repetitive Avalanche Allowed up to Tjmax S Lead-Free Description This HEXFET Power MOSFET util

 6.1. Size:251K  inchange semiconductor
irf2204s.pdf pdf_icon

IRF2204SPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2204S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 7.1. Size:141K  international rectifier
irf2204.pdf pdf_icon

IRF2204SPBF

PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications HEXFET Power MOSFET Electric Power Steering D 14 Volts Automotive Electrical Systems VDSS = 40V Features Advanced Process Technology RDS(on) = 3.6m Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 210A S Fast Switching Repetitive Avalanche Allowed u

 7.2. Size:258K  international rectifier
irf2204pbf.pdf pdf_icon

IRF2204SPBF

PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Features VDSS = 40V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.6m Dynamic dv/dt Rating G 175 C Operating Temperature ID = 210A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utilizes the las

Otros transistores... FQD6N25TF, FQD6N25TM, FQD6N40CTF, FQD6N40CTM, FQD6N40TF, FQD6N40TM, IRF2204LPBF, IRF2204PBF, K2611, IRF22N60C, IRF2804LPBF, IRF2804PBF, IRF2804S-7PPBF, IRF2804SPBF, IRF2805LPBF, IRF2805PBF, IRF2805SPBF