All MOSFET. IRF2204SPBF Datasheet

 

IRF2204SPBF Datasheet and Replacement


   Type Designator: IRF2204SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO-263
 

 IRF2204SPBF substitution

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IRF2204SPBF Datasheet (PDF)

 ..1. Size:323K  international rectifier
irf2204lpbf irf2204spbf.pdf pdf_icon

IRF2204SPBF

PD - 95491AIRF2204SPbFTypical Applications IRF2204LPbF Industrial Motor DriveHEXFET Power MOSFETDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mG 175C Operating Temperature Fast SwitchingID = 170A Repetitive Avalanche Allowed up to TjmaxS Lead-FreeDescriptionThis HEXFET Power MOSFET util

 6.1. Size:251K  inchange semiconductor
irf2204s.pdf pdf_icon

IRF2204SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

 7.1. Size:141K  international rectifier
irf2204.pdf pdf_icon

IRF2204SPBF

PD - 94434AUTOMOTIVE MOSFETIRF2204Typical ApplicationsHEXFET Power MOSFET Electric Power SteeringD 14 Volts Automotive Electrical SystemsVDSS = 40VFeatures Advanced Process TechnologyRDS(on) = 3.6m Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 210AS Fast Switching Repetitive Avalanche Allowed u

 7.2. Size:258K  international rectifier
irf2204pbf.pdf pdf_icon

IRF2204SPBF

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

Datasheet: FQD6N25TF , FQD6N25TM , FQD6N40CTF , FQD6N40CTM , FQD6N40TF , FQD6N40TM , IRF2204LPBF , IRF2204PBF , IRF9640 , IRF22N60C , IRF2804LPBF , IRF2804PBF , IRF2804S-7PPBF , IRF2804SPBF , IRF2805LPBF , IRF2805PBF , IRF2805SPBF .

History: 2SK2761-01MR | 2SK3674-01L | BLM04N06-P | AP20WN170J | 2SK3596-01L | MCU02N80 | URFP150

Keywords - IRF2204SPBF MOSFET datasheet

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