IRF2807ZLPBF Todos los transistores

 

IRF2807ZLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF2807ZLPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 79 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm
   Paquete / Cubierta: TO-262
 

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IRF2807ZLPBF Datasheet (PDF)

 ..1. Size:399K  international rectifier
 irf2807zpbf irf2807zspbf irf2807zlpbf.pdf pdf_icon

IRF2807ZLPBF

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

 ..2. Size:399K  international rectifier
 irf2807zlpbf irf2807zpbf irf2807zspbf.pdf pdf_icon

IRF2807ZLPBF

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

 5.1. Size:256K  inchange semiconductor
 irf2807zl.pdf pdf_icon

IRF2807ZLPBF

Isc N-Channel MOSFET Transistor IRF2807ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 6.1. Size:173K  international rectifier
 irf2807z.pdf pdf_icon

IRF2807ZLPBF

PD - 94659IRF2807ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 9.4m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

MOSTRAR MÁS

Otros transistores... IRF2804S-7PPBF , IRF2804SPBF , IRF2805LPBF , IRF2805PBF , IRF2805SPBF , IRF2807PBF , IRF2807SPBF , IRF2807LPBF , IRF740 , IRF2807ZPBF , IRF2807ZSPBF , IRF2903ZLPBF , IRF2903ZPBF , IRF2903ZSPBF , IRF2907ZLPBF , IRF2907ZPBF , IRF2907ZS-7PPBF .

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