All MOSFET. IRF2807ZLPBF Datasheet

 

IRF2807ZLPBF Datasheet and Replacement


   Type Designator: IRF2807ZLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-262
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IRF2807ZLPBF Datasheet (PDF)

 ..1. Size:399K  international rectifier
irf2807zpbf irf2807zspbf irf2807zlpbf.pdf pdf_icon

IRF2807ZLPBF

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

 ..2. Size:399K  international rectifier
irf2807zlpbf irf2807zpbf irf2807zspbf.pdf pdf_icon

IRF2807ZLPBF

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

 5.1. Size:256K  inchange semiconductor
irf2807zl.pdf pdf_icon

IRF2807ZLPBF

Isc N-Channel MOSFET Transistor IRF2807ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 6.1. Size:173K  international rectifier
irf2807z.pdf pdf_icon

IRF2807ZLPBF

PD - 94659IRF2807ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 9.4m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APT12057LLLG | 2SK3681-01 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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