IRF3710SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3710SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: TO-263

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IRF3710SPBF datasheet

 ..1. Size:291K  international rectifier
 irf3710lpbf irf3710spbf.pdf pdf_icon

IRF3710SPBF

PD - 95108A IRF3710SPbF IRF3710LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 6.1. Size:275K  international rectifier
 irf3710s irf3710l.pdf pdf_icon

IRF3710SPBF

PD - 94201B IRF3710S IRF3710L HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 6.2. Size:184K  international rectifier
 irf3710s.pdf pdf_icon

IRF3710SPBF

PD -91310C IRF3710S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175 C Operating Temperature RDS(on) = 0.025 Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 6.3. Size:258K  inchange semiconductor
 irf3710s.pdf pdf_icon

IRF3710SPBF

Isc N-Channel MOSFET Transistor IRF3710S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

MOSTRAR MÁS

Otros transistores... IRF3709ZCL, IRF3709ZCLPBF, IRF3709ZLPBF, IRF3709ZPBF, IRF3709ZSPBF, IRF3710A, IRF3710LPBF, IRF3710PBF, IRF1010E, IRF3710ZLPBF, IRF3710ZPBF, IRF3710ZSPBF, IRF3711, IRF3711L, IRF3711LPBF, IRF3711PBF, IRF3711S