All MOSFET. IRF3710SPBF Datasheet

 

IRF3710SPBF Datasheet and Replacement


   Type Designator: IRF3710SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-263
 

 IRF3710SPBF substitution

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IRF3710SPBF Datasheet (PDF)

 ..1. Size:291K  international rectifier
 irf3710lpbf irf3710spbf.pdf pdf_icon

IRF3710SPBF

PD - 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to

 6.1. Size:275K  international rectifier
 irf3710s irf3710l.pdf pdf_icon

IRF3710SPBF

PD - 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely

 6.2. Size:184K  international rectifier
 irf3710s.pdf pdf_icon

IRF3710SPBF

PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

 6.3. Size:258K  inchange semiconductor
 irf3710s.pdf pdf_icon

IRF3710SPBF

Isc N-Channel MOSFET Transistor IRF3710SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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Datasheet: IRF3709ZCL , IRF3709ZCLPBF , IRF3709ZLPBF , IRF3709ZPBF , IRF3709ZSPBF , IRF3710A , IRF3710LPBF , IRF3710PBF , IRF1010E , IRF3710ZLPBF , IRF3710ZPBF , IRF3710ZSPBF , IRF3711 , IRF3711L , IRF3711LPBF , IRF3711PBF , IRF3711S .

History: NCE65T1K2F | NCE65T260D

Keywords - IRF3710SPBF MOSFET datasheet

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