IRF3805LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3805LPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 1260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: TO-262

 Búsqueda de reemplazo de IRF3805LPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF3805LPBF datasheet

 ..1. Size:389K  international rectifier
irf3805lpbf irf3805pbf irf3805spbf.pdf pdf_icon

IRF3805LPBF

PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 ..2. Size:389K  international rectifier
irf3805pbf irf3805spbf irf3805lpbf.pdf pdf_icon

IRF3805LPBF

PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 6.1. Size:308K  international rectifier
irf3805l-7ppbf irf3805s-7ppbf.pdf pdf_icon

IRF3805LPBF

PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest proc

 6.2. Size:340K  international rectifier
irf3805s-7ppbf irf3805l-7ppbf.pdf pdf_icon

IRF3805LPBF

IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest processing techni

Otros transistores... IRF3711ZCL, IRF3711ZCLPBF, IRF3711ZLPBF, IRF3711ZPBF, IRF3711ZSPBF, IRF3717PBF, IRF3717PBF-1, IRF3805L-7PPBF, RFP50N06, IRF3805PBF, IRF3805S-7PPBF, IRF3805SPBF, IRF3808L, IRF3808LPBF, IRF3808PBF, IRF3808SPBF, FQD6N50CTF