IRF3805LPBF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF3805LPBF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1260 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO-262
Аналог (замена) для IRF3805LPBF
IRF3805LPBF Datasheet (PDF)
irf3805lpbf irf3805pbf irf3805spbf.pdf

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf3805pbf irf3805spbf irf3805lpbf.pdf

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf3805l-7ppbf irf3805s-7ppbf.pdf

PD - 97205BIRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestproc
irf3805s-7ppbf irf3805l-7ppbf.pdf

IRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestprocessing techni
Другие MOSFET... IRF3711ZCL , IRF3711ZCLPBF , IRF3711ZLPBF , IRF3711ZPBF , IRF3711ZSPBF , IRF3717PBF , IRF3717PBF-1 , IRF3805L-7PPBF , SKD502T , IRF3805PBF , IRF3805S-7PPBF , IRF3805SPBF , IRF3808L , IRF3808LPBF , IRF3808PBF , IRF3808SPBF , FQD6N50CTF .
History: BRCS065N08SHRA | HUFA75337G3 | TPC60R150C
History: BRCS065N08SHRA | HUFA75337G3 | TPC60R150C



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