IRF3805LPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF3805LPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 190
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 1260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033
Ohm
Package:
TO-262
IRF3805LPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF3805LPBF
Datasheet (PDF)
..1. Size:389K international rectifier
irf3805lpbf irf3805pbf irf3805spbf.pdf
PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
..2. Size:389K infineon
irf3805pbf irf3805spbf irf3805lpbf.pdf
PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
6.1. Size:308K international rectifier
irf3805l-7ppbf irf3805s-7ppbf.pdf
PD - 97205BIRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestproc
6.2. Size:743K infineon
auirf3805s-7p auirf3805l-7p.pdf
AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed
6.3. Size:754K infineon
auirf3805 auirf3805s auirf3805l.pdf
AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv
6.4. Size:340K infineon
irf3805s-7ppbf irf3805l-7ppbf.pdf
IRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestprocessing techni
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