FQD8P10TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD8P10TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm

Encapsulados: D-PAK

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FQD8P10TM datasheet

 ..1. Size:640K  fairchild semi
 fqd8p10tm f085.pdf pdf_icon

FQD8P10TM

December 2010 FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailor

 ..2. Size:705K  fairchild semi
 fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10TM

TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored

 0.1. Size:673K  onsemi
 fqd8p10tm-f085.pdf pdf_icon

FQD8P10TM

FQD8P10TM-F085 Features 100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC) General Description Low Crss ( typical 30 pF) These P-Channel enhancement mode power field effect Fast switching transistors are produced using ON Semiconductor s 100% avalanche tested proprietary, planar stripe, DMOS technology. Imp

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