All MOSFET. FQD8P10TM Datasheet

 

FQD8P10TM Datasheet and Replacement


   Type Designator: FQD8P10TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: D-PAK
 

 FQD8P10TM substitution

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FQD8P10TM Datasheet (PDF)

 ..1. Size:640K  fairchild semi
 fqd8p10tm f085.pdf pdf_icon

FQD8P10TM

December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor

 ..2. Size:705K  fairchild semi
 fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10TM

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 0.1. Size:673K  onsemi
 fqd8p10tm-f085.pdf pdf_icon

FQD8P10TM

FQD8P10TM-F085Features100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC)General Description Low Crss ( typical 30 pF)These P-Channel enhancement mode power field effect Fast switchingtransistors are produced using ON Semiconductors 100% avalanche testedproprietary, planar stripe, DMOS technology. Imp

Datasheet: FQD7N30TF , FQD7N30TM , FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , STP65NF06 , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 .

History: 2SK3370 | PH3230S

Keywords - FQD8P10TM MOSFET datasheet

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