FQD8P10TM PDF and Equivalents Search

 

FQD8P10TM Specs and Replacement

Type Designator: FQD8P10TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: D-PAK

FQD8P10TM substitution

- MOSFET ⓘ Cross-Reference Search

 

FQD8P10TM datasheet

 ..1. Size:640K  fairchild semi
fqd8p10tm f085.pdf pdf_icon

FQD8P10TM

December 2010 FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailor... See More ⇒

 ..2. Size:705K  fairchild semi
fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10TM

TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒

 0.1. Size:673K  onsemi
fqd8p10tm-f085.pdf pdf_icon

FQD8P10TM

FQD8P10TM-F085 Features 100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC) General Description Low Crss ( typical 30 pF) These P-Channel enhancement mode power field effect Fast switching transistors are produced using ON Semiconductor s 100% avalanche tested proprietary, planar stripe, DMOS technology. Imp... See More ⇒

Detailed specifications: FQD7N30TF , FQD7N30TM , FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , MMIS60R580P , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 .

Keywords - FQD8P10TM MOSFET specs

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