FQD9N25TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD9N25TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm

Encapsulados: D-PAK

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FQD9N25TF datasheet

 ..1. Size:562K  fairchild semi
 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf pdf_icon

FQD9N25TF

May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology

 6.1. Size:747K  fairchild semi
 fqd9n25tm f085.pdf pdf_icon

FQD9N25TF

February 2011 FQD9N25TM_F085 QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on)=0.42 @V =10V GS transistors are produced using Fairchild s proprietary, Low gate charge (typical 15.5nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especial

 7.1. Size:905K  onsemi
 fqd9n25 fqu9n25.pdf pdf_icon

FQD9N25TF

FQD9N25 / FQU9N25 N-Channel QFET MOSFET 250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V, ID = 3.7 A Description Low Gate Charge (Typ. 15.5 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Crss (Typ. 15 pF) planar stripe and DMOS technology. This advanced MOSFET technology has

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