FQD9N25TF Specs and Replacement
Type Designator: FQD9N25TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: D-PAK
FQD9N25TF substitution
FQD9N25TF Specs
fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf
May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology ... See More ⇒
fqd9n25tm f085.pdf
February 2011 FQD9N25TM_F085 QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on)=0.42 @V =10V GS transistors are produced using Fairchild s proprietary, Low gate charge (typical 15.5nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especial... See More ⇒
fqd9n25 fqu9n25.pdf
FQD9N25 / FQU9N25 N-Channel QFET MOSFET 250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V, ID = 3.7 A Description Low Gate Charge (Typ. 15.5 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Crss (Typ. 15 pF) planar stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒
Detailed specifications: FQD7N30TM , FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , FQD8P10TM , AOD4184A , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , FQI10N20CTU .
History: RRH140P03
Keywords - FQD9N25TF MOSFET specs
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