FQD9N25TM Todos los transistores

 

FQD9N25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD9N25TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 15.5 nC
   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: D-PAK

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FQD9N25TM Datasheet (PDF)

 ..1. Size:562K  fairchild semi
fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf

FQD9N25TM
FQD9N25TM

May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology

 ..2. Size:747K  fairchild semi
fqd9n25tm f085.pdf

FQD9N25TM
FQD9N25TM

February 2011FQD9N25TM_F085QFETQFET250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on)=0.42 @V =10VGStransistors are produced using Fairchilds proprietary, Low gate charge (typical 15.5nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especial

 7.1. Size:905K  onsemi
fqd9n25 fqu9n25.pdf

FQD9N25TM
FQD9N25TM

FQD9N25 / FQU9N25N-Channel QFET MOSFET250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V,ID = 3.7 ADescription Low Gate Charge (Typ. 15.5 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Crss (Typ. 15 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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