FQD9N25TM Datasheet and Replacement. Cross Reference Search

FQD9N25TM Datasheet (PDF)

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May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology

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February 2011FQD9N25TM_F085QFETQFET250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on)=0.42 @V =10VGStransistors are produced using Fairchilds proprietary, Low gate charge (typical 15.5nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especial

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FQD9N25 / FQU9N25N-Channel QFET MOSFET250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V,ID = 3.7 ADescription Low Gate Charge (Typ. 15.5 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Crss (Typ. 15 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

Datasheet: FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , FQD8P10TM , FQD9N25TF , AO3407 , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU .