FQD9N25TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD9N25TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 55 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 7.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15.5 nC
Rise Time (tr): 105 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm
Package: D-PAK
FQD9N25TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD9N25TM Datasheet (PDF)
0.1. fqd9n25tm f085.pdf 
Size:747K _fairchild_semi
February 2011 ® FQD9N25TM_F085 QFET® QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.4A, 250V, RDS(on)=0.42 @V =10V GS transistors are produced using Fairchild’s proprietary, Low gate charge (typical 15.5nC) • planar stripe, DMOS technology. • Low Crss (typical 15pF) This advanced technology has been especial
0.2. fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf Size:562K _fairchild_semi
May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology
Datasheet: FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , FQD8P10TM , FQD9N25TF , 2SK4106 , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10_F133 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU .
