All MOSFET. FQD9N25TM Datasheet

 

FQD9N25TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD9N25TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15.5 nC

Rise Time (tr): 105 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm

Package: D-PAK

FQD9N25TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD9N25TM Datasheet (PDF)

1.1. fqd9n25tm f085.pdf Size:747K _fairchild_semi

FQD9N25TM FQD9N25TM

February 2011 ® FQD9N25TM_F085 QFET® QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.4A, 250V, RDS(on)=0.42 @V =10V GS transistors are produced using Fairchild’s proprietary, Low gate charge (typical 15.5nC) • planar stripe, DMOS technology. • Low Crss (typical 15pF) This advanced technology has been especial

1.2. fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf Size:562K _fairchild_semi

FQD9N25TM FQD9N25TM

May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology

 

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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