FQI19N20CTU Todos los transistores

 

FQI19N20CTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI19N20CTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 139 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 19 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 150 nS
   Conductancia de drenaje-sustrato (Cd): 195 pF
   Resistencia entre drenaje y fuente RDS(on): 0.17 Ohm
   Paquete / Cubierta: I2-PAK

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FQI19N20CTU Datasheet (PDF)

 ..1. Size:1167K  fairchild semi
fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf

FQI19N20CTU
FQI19N20CTU

October 2008QFETFQB19N20C/FQI19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been espec

 6.1. Size:831K  fairchild semi
fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf

FQI19N20CTU
FQI19N20CTU

October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec

 6.2. Size:839K  fairchild semi
fqb19n20ltm fqb19n20l fqi19n20l.pdf

FQI19N20CTU
FQI19N20CTU

October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

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