All MOSFET. FQI19N20CTU Datasheet

 

FQI19N20CTU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQI19N20CTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.5 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: I2-PAK

 FQI19N20CTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI19N20CTU Datasheet (PDF)

 ..1. Size:1167K  fairchild semi
 fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf

FQI19N20CTU FQI19N20CTU

October 2008QFETFQB19N20C/FQI19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been espec

 6.1. Size:831K  fairchild semi
 fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf

FQI19N20CTU FQI19N20CTU

October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec

 6.2. Size:839K  fairchild semi
 fqb19n20ltm fqb19n20l fqi19n20l.pdf

FQI19N20CTU FQI19N20CTU

October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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