FQI27P06TU Todos los transistores

 

FQI27P06TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI27P06TU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 120 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 27 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 33 nC
   Tiempo de subida (tr): 185 nS
   Conductancia de drenaje-sustrato (Cd): 510 pF
   Resistencia entre drenaje y fuente RDS(on): 0.07 Ohm
   Paquete / Cubierta: I2-PAK

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FQI27P06TU Datasheet (PDF)

 ..1. Size:1071K  fairchild semi
fqb27p06tm fqi27p06tu.pdf

FQI27P06TU
FQI27P06TU

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 6.1. Size:1119K  fairchild semi
fqb27p06 fqi27p06.pdf

FQI27P06TU
FQI27P06TU

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 9.1. Size:814K  fairchild semi
fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf

FQI27P06TU
FQI27P06TU

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

 9.2. Size:1099K  fairchild semi
fqi27n25tu f085.pdf

FQI27P06TU
FQI27P06TU

April 2010tmFQI27N25TU_F085250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailo

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