FQI27P06TU - аналоги, даташиты, параметры транзистора

FQI27P06TU Datasheet (PDF)

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October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

6.1. Size:1119K fairchild semi
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9.1. Size:814K fairchild semi
fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

9.2. Size:1099K fairchild semi
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April 2010tmFQI27N25TU_F085250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailo

Другие MOSFET... FQI16N25CTU , FQI17N08LTU , FQI17N08TU , FQI17P06TU , FQI19N20CTU , FQI19N20TU , FQI1P50TU , FQI27N25TU , AON6414A , FQI2N30TU , FQI2N90TU , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU , FQI3N40TU .