All MOSFET. FQI27P06TU Datasheet

 

FQI27P06TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI27P06TU

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 33 nC

Rise Time (tr): 185 nS

Drain-Source Capacitance (Cd): 510 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: I2-PAK

FQI27P06TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI27P06TU Datasheet (PDF)

1.1. fqi27p06tu.pdf Size:1071K _fairchild_semi

FQI27P06TU
FQI27P06TU

October 2008 QFET® FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especia

2.1. fqb27p06 fqi27p06.pdf Size:1119K _fairchild_semi

FQI27P06TU
FQI27P06TU

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored t

 5.1. fqi27n25tu f085.pdf Size:1099K _fairchild_semi

FQI27P06TU
FQI27P06TU

April 2010 tm FQI27N25TU_F085 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fas

5.2. fqi27n25 fqb27n25.pdf Size:814K _fairchild_semi

FQI27P06TU
FQI27P06TU

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been esp

 5.3. fqi27n25tu.pdf Size:814K _fairchild_semi

FQI27P06TU
FQI27P06TU

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.5A, 250V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 50 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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