FQI2N30TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI2N30TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm

Encapsulados: I2-PAK

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FQI2N30TU datasheet

 ..1. Size:741K  fairchild semi
 fqb2n30tm fqi2n30tu.pdf pdf_icon

FQI2N30TU

May 2000 TM QFET QFET QFET QFET FQB2N30 / FQI2N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology h

 9.1. Size:321K  fairchild semi
 fqi2n80tu.pdf pdf_icon

FQI2N30TU

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration Figure 1.0 Packaging Description 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

 9.2. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQI2N30TU

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technolo

 9.3. Size:705K  fairchild semi
 fqb2na90tm fqi2na90tu.pdf pdf_icon

FQI2N30TU

September 2000 TM QFET QFET QFET QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced tech

MOSTRAR MÁS

Otros transistores... FQI17N08LTU, FQI17N08TU, FQI17P06TU, FQI19N20CTU, FQI19N20TU, FQI1P50TU, FQI27N25TU, FQI27P06TU, 2N7000, FQI2N90TU, FQI2NA90TU, FQI2P25TU, FQI34P10TU, FQI3N25TU, FQI3N30TU, FQI3N40TU, FQI3N90TU