All MOSFET. FQI2N30TU Datasheet

 

FQI2N30TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI2N30TU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.7 nC

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 3.7 Ohm

Package: I2-PAK

FQI2N30TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI2N30TU Datasheet (PDF)

1.1. fqi2n30tu.pdf Size:741K _fairchild_semi

FQI2N30TU
FQI2N30TU

May 2000 TM QFET QFET QFET QFET FQB2N30 / FQI2N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology h

5.1. fqi2na90tu.pdf Size:705K _fairchild_semi

FQI2N30TU
FQI2N30TU

September 2000 TM QFET QFET QFET QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced tech

5.2. fqi2n90tu.pdf Size:754K _fairchild_semi

FQI2N30TU
FQI2N30TU

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technolo

 5.3. fqi2n80tu.pdf Size:321K _fairchild_semi

FQI2N30TU

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration: Figure 1.0 Packaging Description: 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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