FQI2N30TU - параметры транзистора MOSFET, его аналоги, datasheet

FQI2N30TU Datasheet (PDF)

..1. Size:741K fairchild semi
fqb2n30tm fqi2n30tu.pdf pdf_icon

May 2000TMQFETQFETQFETQFETFQB2N30 / FQI2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h

9.1. Size:321K fairchild semi
fqi2n80tu.pdf pdf_icon

I2-PAK Tube Packing DataI2-PAK Tube Packing Configuration: Figure 1.0Packaging Description:50 units per TubeI2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

9.2. Size:754K fairchild semi
fqb2n90tm fqi2n90tu.pdf pdf_icon

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

9.3. Size:705K fairchild semi
fqb2na90tm fqi2na90tu.pdf pdf_icon

September 2000TMQFETQFETQFETQFETFQB2NA90 / FQI2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced tech

Другие MOSFET... FQI17N08LTU , FQI17N08TU , FQI17P06TU , FQI19N20CTU , FQI19N20TU , FQI1P50TU , FQI27N25TU , FQI27P06TU , IRF9540 , FQI2N90TU , FQI2NA90TU , FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU , FQI3N40TU , FQI3N90TU .