FQI8P10TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQI8P10TU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
Paquete / Cubierta: I2-PAK
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FQI8P10TU Datasheet (PDF)
fqb8p10tm fqi8p10tu.pdf
TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored
fqb8p10 fqi8p10.pdf
TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored
Otros transistores... FQI6N40CTU , FQI6N50TU , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU , FQI7N80TU , FQI8N60CTU , 18N50 , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , FQI9N50TU , FQL50N40 , FQN1N50CBU .
History: KXU03N25 | UT100N03G-TM3-T | APM9926C | 2SK3748-1E | STP22NF03L | BUZ323 | 2SK1760
History: KXU03N25 | UT100N03G-TM3-T | APM9926C | 2SK3748-1E | STP22NF03L | BUZ323 | 2SK1760
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