All MOSFET. FQI8P10TU Datasheet

 

FQI8P10TU Datasheet and Replacement


   Type Designator: FQI8P10TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: I2-PAK
 

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FQI8P10TU Datasheet (PDF)

 ..1. Size:665K  fairchild semi
 fqb8p10tm fqi8p10tu.pdf pdf_icon

FQI8P10TU

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 7.1. Size:667K  fairchild semi
 fqb8p10 fqi8p10.pdf pdf_icon

FQI8P10TU

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Datasheet: FQI6N40CTU , FQI6N50TU , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU , FQI7N80TU , FQI8N60CTU , CS150N03A8 , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , FQI9N50TU , FQL50N40 , FQN1N50CBU .

History: IPD60R600CP | CTN04PN035

Keywords - FQI8P10TU MOSFET datasheet

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