All MOSFET. FQI8P10TU Datasheet

 

FQI8P10TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQI8P10TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: I2-PAK

 FQI8P10TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI8P10TU Datasheet (PDF)

 ..1. Size:665K  fairchild semi
 fqb8p10tm fqi8p10tu.pdf

FQI8P10TU FQI8P10TU

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 7.1. Size:667K  fairchild semi
 fqb8p10 fqi8p10.pdf

FQI8P10TU FQI8P10TU

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AP60WN650I

 

 
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