FQI8P10TU PDF Specs and Replacement
Type Designator: FQI8P10TU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: I2-PAK
FQI8P10TU substitution
FQI8P10TU PDF Specs
fqb8p10tm fqi8p10tu.pdf
TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒
fqb8p10 fqi8p10.pdf
TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒
Detailed specifications: FQI6N40CTU , FQI6N50TU , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU , FQI7N80TU , FQI8N60CTU , BS170 , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , FQI9N50TU , FQL50N40 , FQN1N50CBU .
Keywords - FQI8P10TU MOSFET specs
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