FQP32N12V2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP32N12V2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 190 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TO-220
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FQP32N12V2 Datasheet (PDF)
fqp32n12v2 fqpf32n12v2.pdf

QFETFQP32N12V2/FQPF32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailor
fqp32n20c fqpf32n20c.pdf

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo
fqp32n20c fqpf32n20c.pdf

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo
Otros transistores... FQP20N06TSTU , FQP22P10 , FQP27P06SW82127 , FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 , IRF740 , FQP33N10L , FQP34N20L , FQP3N25 , FQP3N40 , FQP3N60 , FQP3N80 , FQP3N90 , FQP44N08 .
History: IPB60R040C7 | NCES120P075T4 | MPVT20N50B | IXTQ200N10T | AM4940N | IPB067N08N3 | SIA921EDJ
History: IPB60R040C7 | NCES120P075T4 | MPVT20N50B | IXTQ200N10T | AM4940N | IPB067N08N3 | SIA921EDJ



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