FQP32N12V2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP32N12V2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO-220

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FQP32N12V2 datasheet

 ..1. Size:856K  fairchild semi
 fqp32n12v2 fqpf32n12v2.pdf pdf_icon

FQP32N12V2

QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been especially tailor

 8.1. Size:1208K  fairchild semi
 fqp32n20c fqpf32n20c.pdf pdf_icon

FQP32N12V2

QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailo

 8.2. Size:1184K  onsemi
 fqp32n20c fqpf32n20c.pdf pdf_icon

FQP32N12V2

QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailo

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