FQP32N12V2 Datasheet. Specs and Replacement
Type Designator: FQP32N12V2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-220
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FQP32N12V2 substitution
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FQP32N12V2 datasheet
fqp32n12v2 fqpf32n12v2.pdf
QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been especially tailor... See More ⇒
fqp32n20c fqpf32n20c.pdf
QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailo... See More ⇒
fqp32n20c fqpf32n20c.pdf
QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailo... See More ⇒
Detailed specifications: FQP20N06TSTU, FQP22P10, FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25, IRF840, FQP33N10L, FQP34N20L, FQP3N25, FQP3N40, FQP3N60, FQP3N80, FQP3N90, FQP44N08
Keywords - FQP32N12V2 MOSFET specs
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