IRF530NSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF530NSPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO-263

 Búsqueda de reemplazo de IRF530NSPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF530NSPBF datasheet

 ..1. Size:279K  international rectifier
 irf530nspbf irf530nlpbf.pdf pdf_icon

IRF530NSPBF

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

 ..2. Size:279K  international rectifier
 irf530nspbf.pdf pdf_icon

IRF530NSPBF

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 90m G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

 6.1. Size:178K  international rectifier
 irf530ns.pdf pdf_icon

IRF530NSPBF

PD - 91352A IRF530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175 C Operating Temperature RDS(on) = 0.11 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

 6.2. Size:854K  cn vbsemi
 irf530ns.pdf pdf_icon

IRF530NSPBF

IRF530NS www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET

MOSTRAR MÁS

Otros transistores... IRF520SPBF, IRF5210LPBF, IRF5210PBF, IRF5210SPBF, IRF5305LPBF, IRF5305PBF, IRF5305SPBF, IRF530NPBF, BS170, IRF530S, IRF540NLPBF, IRF540NPBF, IRF540NSPBF, IRF540S, IRF540SPBF, IRF540ZLPBF, IRF540ZPBF