All MOSFET. IRF530NSPBF Datasheet

 

IRF530NSPBF Datasheet and Replacement


   Type Designator: IRF530NSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-263
 

 IRF530NSPBF substitution

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IRF530NSPBF Datasheet (PDF)

 ..1. Size:279K  international rectifier
 irf530nspbf irf530nlpbf.pdf pdf_icon

IRF530NSPBF

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

 ..2. Size:279K  international rectifier
 irf530nspbf.pdf pdf_icon

IRF530NSPBF

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

 6.1. Size:178K  international rectifier
 irf530ns.pdf pdf_icon

IRF530NSPBF

PD - 91352AIRF530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating TemperatureRDS(on) = 0.11G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low o

 6.2. Size:854K  cn vbsemi
 irf530ns.pdf pdf_icon

IRF530NSPBF

IRF530NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

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Keywords - IRF530NSPBF MOSFET datasheet

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