IRF5M4905 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF5M4905
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 165 nS
Cossⓘ - Capacitancia de salida: 1310 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: TO-254AA
Búsqueda de reemplazo de IRF5M4905 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF5M4905 datasheet
irf5m4905.pdf
PD - 94155 HEXFET POWER MOSFET IRF5M4905 THRU-HOLE (TO-254AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.03 -35A* IRF5M4905 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the
irf5m5210.pdf
PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the
irf5m3710.pdf
PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the
irf5m3205.pdf
PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the
Otros transistores... IRF5803D2PBF, IRF5804, IRF5805PBF, IRF5806PBF, IRF5EA1310, IRF5M3205, IRF5M3415, IRF5M3710, AO3400A, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905, IRF5N5210, IRF5NJ3315, IRF5NJ5305
History: BUK7M42-60E
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
Popular searches
bc546 | 2sc458 | a733 transistor | mpsa92 | tip142 | d882 | irf740 datasheet | ksa992
