IRF5M4905 Specs and Replacement
Type Designator: IRF5M4905
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 1310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-254AA
IRF5M4905 substitution
- MOSFET ⓘ Cross-Reference Search
IRF5M4905 datasheet
irf5m4905.pdf
PD - 94155 HEXFET POWER MOSFET IRF5M4905 THRU-HOLE (TO-254AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.03 -35A* IRF5M4905 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒
irf5m5210.pdf
PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒
irf5m3710.pdf
PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒
irf5m3205.pdf
PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒
Detailed specifications: IRF5803D2PBF, IRF5804, IRF5805PBF, IRF5806PBF, IRF5EA1310, IRF5M3205, IRF5M3415, IRF5M3710, AO3400A, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905, IRF5N5210, IRF5NJ3315, IRF5NJ5305
Keywords - IRF5M4905 MOSFET specs
IRF5M4905 cross reference
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History: VBZM80N10
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