IRF5M4905 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRF5M4905
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 165 ns
Cossⓘ - Выходная емкость: 1310 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO-254AA
Аналог (замена) для IRF5M4905
IRF5M4905 Datasheet (PDF)
irf5m4905.pdf
PD - 94155HEXFET POWER MOSFET IRF5M4905THRU-HOLE (TO-254AA)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -55V 0.03 -35A* IRF5M4905Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m5210.pdf
PD - 94247HEXFET POWER MOSFET IRF5M5210THRU-HOLE (TO-254AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3710.pdf
PD - 94234HEXFET POWER MOSFET IRF5M3710THRU-HOLE (TO-254AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3205.pdf
PD - 94292AHEXFET POWER MOSFET IRF5M3205THRU-HOLE (TO-254AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
Другие MOSFET... IRF5803D2PBF , IRF5804 , IRF5805PBF , IRF5806PBF , IRF5EA1310 , IRF5M3205 , IRF5M3415 , IRF5M3710 , AO3400A , IRF5M5210 , IRF5N3205 , IRF5N3415 , IRF5N3710 , IRF5N4905 , IRF5N5210 , IRF5NJ3315 , IRF5NJ5305 .
History: IRF5210LPBF | IRF5M3710 | VBZP50N50S | FS50SM-3 | FS50KM-2 | 2N4416A
History: IRF5210LPBF | IRF5M3710 | VBZP50N50S | FS50SM-3 | FS50KM-2 | 2N4416A
Список транзисторов
Обновления
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