IRF5Y1310CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94058HEXFET POWER MOSFET IRF5Y1310CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

PD - 94179AHEXFET POWER MOSFET IRF5Y3205CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features

PD-94165AHEXFET POWER MOSFET IRF5Y6215CMTHRU-HOLE (TO-257AA)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

PD - 94028HEXFET POWER MOSFET IRF5Y5305CMTHRU-HOLE (TO-257AA)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures

PD - 94349AHEXFET POWER MOSFET IRF5Y31N20THRU-HOLE (TO-257AA)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

PD - 94027AHEXFET POWER MOSFET IRF5Y9540CMTHRU-HOLE (TO-257AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatur

PD - 94178HEXFET POWER MOSFET IRF5Y3710CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

PD - 94019AHEXFET POWER MOSFET IRF5YZ48CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

PD - 94268HEXFET POWER MOSFET IRF5Y3315CMTHRU-HOLE (TO-257AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

PD - 94017BHEXFET POWER MOSFET IRF5Y540CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures: