IRF5Y1310CM Todos los transistores

 ..1. Size:105K  international rectifier
 irf5y1310cm.pdf

PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.1. Size:103K  international rectifier
 irf5y3205cm.pdf

PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.2. Size:159K  international rectifier
 irf5y6215cm.pdf

PD-94165A HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.3. Size:106K  international rectifier
 irf5y5305cm.pdf

PD - 94028 HEXFET POWER MOSFET IRF5Y5305CM THRU-HOLE (TO-257AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.4. Size:97K  international rectifier
 irf5y31n20.pdf

PD - 94349A HEXFET POWER MOSFET IRF5Y31N20 THRU-HOLE (TO-257AA) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.5. Size:103K  international rectifier
 irf5y9540cm.pdf

PD - 94027A HEXFET POWER MOSFET IRF5Y9540CM THRU-HOLE (TO-257AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117 -18A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Featur

 9.6. Size:103K  international rectifier
 irf5y3710cm.pdf

PD - 94178 HEXFET POWER MOSFET IRF5Y3710CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.7. Size:104K  international rectifier
 irf5yz48cm.pdf

PD - 94019A HEXFET POWER MOSFET IRF5YZ48CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.8. Size:104K  international rectifier
 irf5y3315cm.pdf

PD - 94268 HEXFET POWER MOSFET IRF5Y3315CM THRU-HOLE (TO-257AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.9. Size:97K  international rectifier
 irf5y540cm.pdf

PD - 94017B HEXFET POWER MOSFET IRF5Y540CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features