IRF5Y1310CM Specs and Replacement
Type Designator: IRF5Y1310CM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 463 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO-257AA
IRF5Y1310CM substitution
- MOSFET ⓘ Cross-Reference Search
IRF5Y1310CM datasheet
irf5y1310cm.pdf
PD - 94058 HEXFET POWER MOSFET IRF5Y1310CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
irf5y3205cm.pdf
PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features... See More ⇒
irf5y6215cm.pdf
PD-94165A HEXFET POWER MOSFET IRF5Y6215CM THRU-HOLE (TO-257AA) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒
irf5y5305cm.pdf
PD - 94028 HEXFET POWER MOSFET IRF5Y5305CM THRU-HOLE (TO-257AA) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features... See More ⇒
Detailed specifications: IRF5N5210, IRF5NJ3315, IRF5NJ5305, IRF5NJ540, IRF5NJ6215, IRF5NJ9540, IRF5NJZ34, IRF5NJZ48, RU7088R, IRF5Y31N20, IRF5Y3315CM, IRF5Y3710CM, IRF5Y5305CM, IRF5Y540CM, IRF5Y6215CM, IRF5Y9540CM, IRF5YZ48CM
Keywords - IRF5Y1310CM MOSFET specs
IRF5Y1310CM cross reference
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IRF5Y1310CM replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FDR6580
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