IRF5Y1310CM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF5Y1310CM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 110 nC
Время нарастания (tr): 85 ns
Выходная емкость (Cd): 463 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.044 Ohm
Тип корпуса: TO-257AA
Аналог (замена) для IRF5Y1310CM
IRF5Y1310CM Datasheet (PDF)
irf5y1310cm.pdf
PD - 94058HEXFET POWER MOSFET IRF5Y1310CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
irf5y3205cm.pdf
PD - 94179AHEXFET POWER MOSFET IRF5Y3205CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features
irf5y6215cm.pdf
PD-94165AHEXFET POWER MOSFET IRF5Y6215CMTHRU-HOLE (TO-257AA)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:
irf5y5305cm.pdf
PD - 94028HEXFET POWER MOSFET IRF5Y5305CMTHRU-HOLE (TO-257AA)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures
irf5y31n20.pdf
PD - 94349AHEXFET POWER MOSFET IRF5Y31N20THRU-HOLE (TO-257AA)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5y9540cm.pdf
PD - 94027AHEXFET POWER MOSFET IRF5Y9540CMTHRU-HOLE (TO-257AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatur
irf5y3710cm.pdf
PD - 94178HEXFET POWER MOSFET IRF5Y3710CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
irf5yz48cm.pdf
PD - 94019AHEXFET POWER MOSFET IRF5YZ48CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
irf5y3315cm.pdf
PD - 94268HEXFET POWER MOSFET IRF5Y3315CMTHRU-HOLE (TO-257AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:
irf5y540cm.pdf
PD - 94017BHEXFET POWER MOSFET IRF5Y540CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:
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