FQP7N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQP7N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 98 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET FQP7N40

FQP7N40 Datasheet (PDF)

..1. Size:752K fairchild semi
fqp7n40.pdf

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 400V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been e

9.1. Size:886K fairchild semi
fqp7n65c fqpf7n65c.pdf

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

9.2. Size:536K fairchild semi
fqp7n10.pdf

December 2000TMQFETQFETQFETQFETFQP7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is espe

9.3. Size:579K fairchild semi
fqp7n60.pdf

April 2000TMQFETQFETQFETQFETFQP7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

9.4. Size:557K fairchild semi
fqp7n20l.pdf

December 2000TMQFETQFETQFETQFETFQP7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

9.5. Size:544K fairchild semi
fqp7n10l.pdf

December 2000TMQFETQFETQFETQFETFQP7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology

9.6. Size:885K fairchild semi
fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf

9.7. Size:848K fairchild semi
fqp7n80c fqpf7n80c.pdf

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

9.8. Size:798K fairchild semi
fqp7n80.pdf

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been es

9.9. Size:664K fairchild semi
fqp7n20.pdf

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been

9.10. Size:849K onsemi
fqp7n80c fqpf7n80c.pdf