All MOSFET. FQP7N40 Datasheet

 

FQP7N40 Datasheet and Replacement


   Type Designator: FQP7N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

 FQP7N40 substitution

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FQP7N40 Datasheet (PDF)

 ..1. Size:752K  fairchild semi
 fqp7n40.pdf pdf_icon

FQP7N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 400V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been e

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N40

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 9.2. Size:536K  fairchild semi
 fqp7n10.pdf pdf_icon

FQP7N40

December 2000TMQFETQFETQFETQFETFQP7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is espe

 9.3. Size:579K  fairchild semi
 fqp7n60.pdf pdf_icon

FQP7N40

April 2000TMQFETQFETQFETQFETFQP7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

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Datasheet: IRF6215SPBF , FQP6N90 , FQP6P25 , FQP70N08 , FQP7N10 , FQP7N10L , FQP7N20 , FQP7N20L , P55NF06 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , FQP90N10V2 , FQP9N08 , FQP9N08L , FQP9N15 .

History: UMBF170 | NCE01H21T | UT100N03-Q

Keywords - FQP7N40 MOSFET datasheet

 FQP7N40 cross reference
 FQP7N40 equivalent finder
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 FQP7N40 replacement

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