Справочник MOSFET. FQP7N40

 

FQP7N40 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP7N40
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 98 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для FQP7N40

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP7N40 Datasheet (PDF)

 ..1. Size:752K  fairchild semi
 fqp7n40.pdf pdf_icon

FQP7N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 400V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been e

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N40

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 9.2. Size:536K  fairchild semi
 fqp7n10.pdf pdf_icon

FQP7N40

December 2000TMQFETQFETQFETQFETFQP7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is espe

 9.3. Size:579K  fairchild semi
 fqp7n60.pdf pdf_icon

FQP7N40

April 2000TMQFETQFETQFETQFETFQP7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

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Другие MOSFET... IRF6215SPBF , FQP6N90 , FQP6P25 , FQP70N08 , FQP7N10 , FQP7N10L , FQP7N20 , FQP7N20L , IRFB4115 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , FQP90N10V2 , FQP9N08 , FQP9N08L , FQP9N15 .

History: SSF1020D | WM06N03LE | KP7178A | FCP190N60GF102 | ISL9N303AS3 | FCP190N60_GF102 | SUN09A40D

 

 
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