FQPF17P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF17P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 325 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de FQPF17P06 MOSFET
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FQPF17P06 datasheet
fqpf17p06.pdf
May 2001 TM QFET FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored
fqpf17n40t.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee
fqpf17n08.pdf
January 2001 TM QFET QFET QFET QFET FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has bee
Otros transistores... FQPF13N50CT, FQPF13N50T, FQPF14N15, FQPF14N30, FQPF16N25, FQPF17N08, FQPF17N08L, FQPF17N40T, IRFP250, FQPF17P10, FQPF18N20V2, FQPF18N50V2, FQPF19N10L, FQPF19N20CYDTU, FQPF19N20T, FQPF1N50, FQPF1N60
History: FX20ASJ-06 | FMI12N50ES
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