Справочник MOSFET. FQPF17P06

 

FQPF17P06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF17P06
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FQPF17P06

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF17P06 Datasheet (PDF)

 ..1. Size:674K  fairchild semi
fqpf17p06.pdfpdf_icon

FQPF17P06

May 2001TMQFETFQPF17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailored

 7.1. Size:664K  fairchild semi
fqpf17p10.pdfpdf_icon

FQPF17P06

TMQFETFQPF17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -10.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 8.1. Size:723K  fairchild semi
fqpf17n40t.pdfpdf_icon

FQPF17P06

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 8.2. Size:600K  fairchild semi
fqpf17n08.pdfpdf_icon

FQPF17P06

January 2001TMQFETQFETQFETQFETFQPF17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has bee

Другие MOSFET... FQPF13N50CT , FQPF13N50T , FQPF14N15 , FQPF14N30 , FQPF16N25 , FQPF17N08 , FQPF17N08L , FQPF17N40T , STF13NM60N , FQPF17P10 , FQPF18N20V2 , FQPF18N50V2 , FQPF19N10L , FQPF19N20CYDTU , FQPF19N20T , FQPF1N50 , FQPF1N60 .

History: 9N70 | STP75N3LLH6

 

 
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