FQPF17P06 MOSFET Datasheet: P-Ch, 60V, 12A. Full specification with pinout and replacement list

FQPF17P06 Specs and Replacement

   Type Designator: FQPF17P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-220F

FQPF17P06 substitution

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FQPF17P06 datasheet

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May 2001 TM QFET FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored ... See More ⇒

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April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee... See More ⇒

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January 2001 TM QFET QFET QFET QFET FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has bee... See More ⇒