All MOSFET. FQPF17P06 Datasheet

 

FQPF17P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF17P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 39 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 21 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 325 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO-220F

FQPF17P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF17P06 Datasheet (PDF)

1.1. fqpf17p06.pdf Size:674K _fairchild_semi

FQPF17P06
FQPF17P06

May 2001 TM QFET FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12A, -60V, RDS(on) = 0.12Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especially tailored

3.1. fqpf17p10.pdf Size:664K _fairchild_semi

FQPF17P06
FQPF17P06

TM QFET FQPF17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -10.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially tailored to

 4.1. fqpf17n40t.pdf Size:723K _fairchild_semi

FQPF17P06
FQPF17P06

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.5A, 400V, RDS(on) = 0.27Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has bee

4.2. fqpf17n08l.pdf Size:555K _fairchild_semi

FQPF17P06
FQPF17P06

December 2000 TM QFET QFET QFET QFET FQPF17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11.2A, 80V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced technology

 4.3. fqpf17n40.pdf Size:728K _fairchild_semi

FQPF17P06
FQPF17P06

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially

4.4. fqpf17n08.pdf Size:600K _fairchild_semi

FQPF17P06
FQPF17P06

January 2001 TM QFET QFET QFET QFET FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11.2A, 80V, RDS(on) = 0.115Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 28 pF) This advanced technology has bee

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