IRFZ24N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ24N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 45 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 17 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 13.3 nC
Resistencia drenaje-fuente RDS(on): 0.07 Ohm
Empaquetado / Estuche: TO220AB
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IRFZ24N Datasheet (PDF)
1.1. irfz24nspbf.pdf 
Size:672K _update
PD - 95147 IRFZ24NS/LPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
1.2. irfz24npbf.pdf Size:242K _update
IRFZ24NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating l 175°C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) Ω G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res
1.3. irfz24n 1.pdf Size:53K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re
1.4. irfz24ns.pdf Size:159K _international_rectifier
PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07? Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res
1.5. irfz24n 1.pdf Size:53K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re
1.6. irfz24n.pdf Size:123K _international_rectifier
PD - 91354A IRFZ24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area
Otros transistores... IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A , IRFP150N , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: PSMNR90-30BL | PSMN9R8-30MLC | PSMN9R5-100BS | PSMN9R0-25MLC | PSMN8R7-80BS | PSMN8R5-108ES | PSMN8R5-100XS | PSMN8R5-100PS | PSMN8R5-100ES | PSMN8R0-40BS | PSMN7R8-120PS | PSMN7R8-120ES | PSMN7R8-100PSE | PSMN7R6-60XS | PSMN7R6-60BS |